Comparative study of room temperature and quench condensed bismuth films: morphology and electronic characteristics

TL;DR

This study compares bismuth thin films deposited at room temperature and quench condensed conditions, revealing differences in morphology, crystallinity, and electronic properties across various substrates.

Contribution

It provides a detailed analysis of how substrate temperature influences the structural and electronic characteristics of bismuth films, highlighting new insights into growth mechanisms.

Findings

Quench condensed films have lower surface roughness and smaller grain size.

Films at 77 K show preferential (110) orientation, unlike (111) at room temperature.

Quench condensed films exhibit lower carrier mobility and density.

Abstract

A comparison between properties of bismuth thin films deposited at substrate temperatures of 296 K (room temperature) and 77 K (quench condensed) is studied across epitaxial, amorphous, and van der Waals substrates. The experiments demonstrate changes in crystallinity, morphology, and electrical transport arising from the influence of substrate temperature. Moreover, the work highlights changes in grain size, roughness, X-ray diffraction peak intensities, and preferred orientation between the two deposition temperatures. The orientation of the films deposited at 77 K is preferentially (110), compared to (111) for films deposited at room temperature. Films grown at 77 K differ from those deposited at room temperature, exhibiting lower surface roughness but smaller grain size, which leads to increased electrical resistivity in quench condensed films. The decrease of substrate temperature during the deposition appears to induce slightly more strain in depositions on the amorphous and van der Waals substrates than on the epitaxial substrates. Lastly, quench condensed films exhibit lower carrier mobility and lower carrier density compared to room temperature films. This study elucidates previously incompletely understood processes in bismuth deposition and raises new questions regarding growth on van der Waals surfaces.