Kramers-Kronig causality in integrated photonics: The spectral tension between ultraviolet transition and mid-infrared absorption
Yue Hu, Zhenyuan Shang, Chenxi Zhang, Yuanjie Ning, Weiqin Zheng, Dengke Chen, Sanli Huang, Baoqi Shi, Zeying Zhong, Hao Tan, Wei Sun, Yi-Han Luo, Xinmao Yin, Zhi-Chuan Niu, Junqiu Liu

TL;DR
This paper reveals how residual impurities in integrated photonics materials cause significant dispersion shifts from UV to MIR, affecting device performance and requiring refined models for accurate dispersion engineering.
Contribution
It demonstrates the fundamental impact of residual bonds on dispersion across spectra and validates this through experimental broadband loss and dispersion measurements.
Findings
Residual bonds alter MIR vibrational absorption and UV electronic transitions.
Spectral tension between UV and MIR modifications influences group velocity dispersion.
Experimental validation in silicon nitride circuits confirms the theoretical predictions.
Abstract
Dispersion engineering via geometric confinement is essential to integrated photonics, enabling phenomena such as soliton microcombs, supercontinua, parametric oscillators, and entangled photons. However, prevailing methodologies rely on semi-empirical Sellmeier models that assume idealized material purity, neglecting the pronounced dispersion shifts induced by residual impurities like hydrogen-related bonds. Here, we demonstrate that these residual bonds fundamentally alter the dispersion landscape spanning from the ultraviolet (UV) to the mid-infrared (MIR) spectra. Specifically, they introduce MIR vibrational absorption while simultaneously modifying UV electronic transition, shifting the bandgap and UV pole. We show that the spectral tension between these UV and MIR modifications dictates the group velocity dispersion from the visible to the near-infrared (NIR) via the…
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