SesQ: A Surface Electrostatic Simulator for Precise Energy Participation Ratio Simulation in Superconducting Qubits
Ziang Wang, Shuyuan Guan, Feng Wu, Xiaohang Zhang, Qiong Li, Jianxin Chen, Xin Wan, Tian Xia, Hui-Hai Zhao

TL;DR
SesQ is a surface integral equation simulator that accurately and efficiently computes energy participation ratios in superconducting qubits, overcoming FEM limitations and enabling rapid design optimization.
Contribution
We introduce SesQ, a surface-based electromagnetic simulator that significantly improves the speed and accuracy of EPR calculations in superconducting qubits compared to traditional FEM methods.
Findings
SesQ accelerates capacitance extraction by about 100 times.
SesQ provides more precise EPR calculations than FEM.
FEM underestimates EPR in practical transmon qubit simulations.
Abstract
An accurate and efficient numerical electromagnetic model for superconducting qubits is essential for characterizing and minimizing design-dependent dielectric losses. The energy participation ratio (EPR) is the commonly adopted metric used to evaluate these losses, but its calculation presents a severe multiscale computational challenge. Conventional finite element method (FEM) requires 3D volumetric meshing, leading to prohibitive computational costs and memory requirements when attempting to capture singular electric fields at nanometer-thin material interfaces. To address this bottleneck, we propose SesQ, a surface integral equation simulator tailored for the precise simulation of the EPR. By applying discretization on 2D surfaces, deriving a semi-analytical multilayer Green's function, and employing a dedicated non-conformal boundary mesh refinement scheme, SesQ accurately resolves…
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