High PDMR contrast in single NV centres and related photocurrent properties

TL;DR

This study enhances understanding of photocurrent mechanisms in single NV centres, revealing how interface states can amplify PDMR contrast up to 50% and above, crucial for quantum computing applications.

Contribution

It introduces a new technique to locate photocurrent features and demonstrates how controlling interface states significantly boosts PDMR contrast.

Findings

Photocurrent contrast in single NV centres can reach 50% and above.

Interface trap levels store electrons generated at NV centres.

Introducing a second laser amplifies PDMR contrast via interface states.

Abstract

This paper aims to extend the understanding of the mechanism of photo-electrical detection of magnetic resonance (PDMR) in nitrogen-vacancy (NV) centres. This technique is particularly important for development of solid-state quantum computing platforms. In particular, we report on the new insight in the photocurrent (PC) generation and charge cycling in the single NV centre, which is related to PDMR contrast reaching 50\% and above. We develop a technique to locate PC related features. We find that electrons generated at the NV centre are stored in interface trap levels and establish that the interface states serve as an amplifier that can be driven by introducing a second laser into our confocal setup. We show that controlling these interface states allows one to significantly enhance the PDMR contrast. We develop a model that consistently explains observed amplification effects even without the application of a bias voltage.