Coexistence of ferromagnetism and ferroelectricity in the van der Waals multiferroic CuIn0.2V0.8P2S6
Subrata Ghosh, Rosalin Mohanty, Yuwei Sun, Soumi Mondal, Chandan De, Jose G. Jimenez, Weiwei Xie, Cheng Gong, and Zhiqiang Mao

TL;DR
This study reports a 2D van der Waals multiferroic material, CuIn0.2V0.8P2S6, that intrinsically exhibits both ferromagnetism at low temperature and room-temperature ferroelectricity, advancing multifunctional device potential.
Contribution
The paper demonstrates the realization of a single-phase 2D vdW multiferroic material with coexisting ferromagnetism and ferroelectricity, overcoming previous interface and stability limitations.
Findings
CuIn0.2V0.8P2S6 shows ferromagnetic ordering with TC of 14.6 K.
Ferroelectricity confirmed via ferroelectric tunnel junctions with high electroresistance.
Magnetodielectric response observed below TC, indicating interplay between orders.
Abstract
Two-dimensional (2D) van der Waals (vdW) multiferroics have emerged as a promising platform for next-generation multifunctional devices. Although recent studies have demonstrated that artificial heterostructures can combine dual ferroic orders and exhibit strong magnetoelectric coupling, their performance is sometimes limited by poor interface quality and inadequate long-term stability. By contrast, the realization of intrinsic single-phase materials with coexisting ferromagnetism and ferroelectricity remains a longstanding challenge in the field. Here we report the realization of a single-phase 2D vdW multiferroic system, CuIn0.2V0.8P2S6, which exhibits both ferromagnetism and room-temperature ferroelectricity. The intrinsic ferroelectric nature of CuIn0.2V0.8P2S6 was probed using ferroelectric tunnel junctions, which exhibit a large tunneling electroresistance with an ON/OFF ratio of…
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