Channeling-in channeling-out revisited: selected area electron channeling and electron backscatter diffraction
T. Ben Britton, M. Haroon Qaiser, Ruth M. Birch

TL;DR
This study investigates how electron channeling-in influences electron backscatter diffraction signals in SEM, revealing significant effects that impact data interpretation and proposing a framework to control these effects.
Contribution
It introduces a combined SA-ECP and EBSD approach to visualize and understand channeling-in/channeling-out effects, highlighting their relevance in routine SEM analyses.
Findings
Channeling-in significantly biases EBSD quality metrics.
Wide-angle channeling features are visible in routine EBSD maps.
The combined approach offers a way to control channeling effects in SEM.
Abstract
Scanning electron microscopy combined with electron backscatter diffraction (EBSD) and electron channeling provides rich crystallographic contrast, but the mutual influence of channeling-in and channeling-out is often simplified or neglected in quantitative analyses. In this work, we use selected-area electron channeling patterns (SA-ECPs) acquired from a single-crystal silicon wafer while recording an EBSD pattern at every incident beam direction, thereby directly probing how channeling-in affects the EBSD signal. We show that common Hough-based quality metrics (pattern quality, band contrast, and band slope), pattern-matching cross-correlation coefficients, and Fourier-based signal-to-noise ratios all exhibit strong crystallographic modulations that follow the underlying ECP, in both raw and background-corrected patterns. Similar wide-angle channeling features are also visible in…
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