Ultrafast Formation and Annihilation of Strongly Bound, Anisotropic Excitons
Lawson T. Lloyd, Tommaso Pincelli, Mohamed Amine Wahada, Alessandro De Vita, Ferdinand Menzel, Kseniia Mosina, T\'ulio H. L. G. Castro, Alexander Neef, Andreas V. Stier, Nathan P. Wilson, Zden\v{e}k Sofer, Jonathan J. Finley, Martin Wolf, Laurenz Rettig, and Ralph Ernstorfer

TL;DR
This study reveals the ultrafast formation, anisotropic nature, and dynamics of strongly bound excitons in CrSBr, a layered magnetic semiconductor, using advanced spectroscopic techniques, with implications for optoelectronic and spintronic devices.
Contribution
It provides the first direct measurement of large exciton binding energy and anisotropic exciton distribution in CrSBr, elucidating their formation and relaxation mechanisms.
Findings
Exciton binding energy is approximately 800 meV.
Excitons exhibit highly anisotropic momentum space distribution.
Interconversion between bound excitons and free carriers occurs within a few picoseconds.
Abstract
Van der Waals (vdW) layered materials with long-range magnetic order have the potential to enable novel optoelectronic and spintronic applications. Among these, CrSBr is an air-stable, direct band gap semiconductor that hosts interlayer antiferromagnetic order, a highly anisotropic electronic structure, and strongly bound excitons. In particular, excitons in CrSBr have been shown to inherit the quasi-one-dimensional nature of the material and also couple to the underlying spinorder. However, mechanisms of exciton formation, dissociation, and interaction with free carriers remain largely unexplored, despite being crucial for spintronic and optoelectronic applications. Here, we employ time- and angle-resolved photoemission spectroscopy to map the electronic structure and excited state dynamics in CrSBr. We directly resolve an exceptionally large exciton binding energy (~800 meV) and a…
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