Modeling key characteristics of high-efficiency gallium arsenide solar cells
A.V. Sachenko, V.P. Kostylyov, I.O. Sokolovskyi, and A.I. Shkrebtii

TL;DR
This paper presents a comprehensive theoretical model for high-efficiency gallium arsenide solar cells, incorporating various recombination mechanisms, band-gap narrowing, and photon recycling to optimize their performance.
Contribution
It introduces a detailed one-dimensional model that considers multiple recombination processes and photon recycling, advancing the understanding of GaAs solar cell efficiency.
Findings
Good agreement between experimental and theoretical dependencies.
Model can be used to optimize GaAs solar cell characteristics.
Recombination mechanisms significantly impact cell efficiency.
Abstract
The paper proposes a theoretical approach to modeling the key characteristics of highly efficient gallium arsenide-based solar cells (SCs), using a one-dimensional SC model. The following recombination mechanisms are considered in the modeling: radiative recombination, interband Auger recombination, Shockley-Reed-Hall (SRH) recombination, surface recombination, recombination in the space charge region (SCR), and recombination along the perimeter of the structure. A simple empirical formula is proposed to describe the recombination along the perimeter of the SC structure. The GaAs band-gap narrowing effect is also taken into consideration. The main results are obtained under the assumption that the times of Shockley-Reed-Hall recombination and recombination in the SCR are the same. The effect of photon recycling (re-emission and re-absorption) is taken into account in a model similar to…
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