Electrostatic Photoluminescence Tuning in All-Solid-State Perovskite Transistors
Vladimir Bruevich, Dmitry Maslennikov, Beier Hu, Artem A. Bakulin, Vitaly Podzorov

TL;DR
This paper presents an all-solid-state perovskite transistor that uses an electric field to reversibly control photoluminescence intensity, enabling high-efficiency, tunable optoelectronic switching for photonics applications.
Contribution
It introduces a novel photoluminescence field effect transistor based on epitaxial perovskite films, demonstrating electrostatic modulation of luminescence with high efficiency.
Findings
Photoluminescence can be modulated by 65-98% with gate voltage.
Nearly complete suppression of non-radiative recombination is achievable.
High external quantum efficiencies in large-area devices.
Abstract
We demonstrate an all solid state semiconductor device, based on epitaxial single crystalline metal halide perovskites, enabling reversible control of a perovskite photoluminescence with a gate voltage. Fundamentally distinct from electroluminescent diodes, such a photoluminescence field effect transistor uses the gate electric field to electrostatically modulate the interfacial density of mobile charges, thereby affecting the radiative and nonradiative recombination channels of photocarriers. Varying the gate voltage in such transistors efficiently changes the rate of nonradiative interfacial recombination and modulates the photoluminescence intensity by 65 to 98 percent (depending on temperature). At favorable gating, nearly complete elimination of non-radiative losses can be achieved. This functionality, coupled with the strong visible-range absorption and emission, possible due to…
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Taxonomy
TopicsPerovskite Materials and Applications · Strong Light-Matter Interactions · 2D Materials and Applications
