Multiple Topological States in LaAgAs2, a Failed Square-Net Semimetal
Yang Liu, Tongrui Li, Xixi Yuan, Nour Maraytta, Alexei V. Fedorov, Asish K. Kundu, Turgut Yilmaz, Elio Vescovo, Xueliang Wu, Long Zhang, Mingquan He, Yisheng Chai, Xiaoyuan Zhou, Michael Merz, Zhe Sun, Huixia Fu, Tonica Valla, and Aifeng Wang

TL;DR
This study comprehensively investigates LaAgAs2, revealing its complex electronic structure, multiple topological states, and the influence of structural distortion, thereby guiding the design of new topological materials.
Contribution
It provides the first detailed analysis of LaAgAs2's electronic and topological properties, highlighting the role of structural distortion in topological state formation.
Findings
LaAgAs2 hosts multiple topological states including a Z2 surface state and a bulk Dirac state.
Cis-trans distortion transforms Dirac bands into quasi-1D trivial bands.
The electronic structure is well explained by DFT considering structural distortion.
Abstract
The rational design of new materials emerges as an important direction to explore new topological materials, which is based on the understanding of the correlation between crystal and electronic structures. In this paper, we perform a comprehensive study on the crystal and electronic structures in LaAgAs2 through a combination of single-crystal x-ray diffraction (XRD), quantum oscillation, and angle-resolved photoemission spectroscopy (ARPES) experimental measurements, and density functional theory (DFT) calculations. Single-crystal XRD measurements reveal that LaAgAs2 crystallizes into a HfCuSi2-derived structure with the square net distorted into cis-trans chains. Quantum oscillation measurements reveal two frequencies with small effective masses and quasi-two-dimensional (2D) characters. ARPES measurements reveal an electronic structure strikingly different from the square-net-based…
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Taxonomy
TopicsTopological Materials and Phenomena · Iron-based superconductors research · 2D Materials and Applications
