Strain-Engineered Deterministic Quantum Dots for Telecom O-Band Emission Using Buried Stressors
Imad Limame, Ching-Wen Shih, Kartik Gaur, Martin Podhorsk\'y, Sarthak Tripathi, Setthanat Wijitpatima, Aris Koulas-Simos, Chirag C. Palekar, Petr Klenovsk\'y, Stephan Reitzenstein

TL;DR
This paper demonstrates a novel strain-engineering method using buried stressors to create site-controlled quantum dots emitting at telecom O-band wavelengths, with high purity and thermal stability, suitable for quantum communication.
Contribution
Introduces a buried AlAs/Al2O3 stressor layer technique for deterministic, site-controlled quantum dots emitting at telecom wavelengths, eliminating the need for strain-reducing layers and enabling spectral tunability.
Findings
Achieved telecom O-band emission from site-controlled InGaAs/GaAs quantum dots.
Quantum dots exhibit high-purity single-photon emission at 4 K and 77 K.
Modeling confirms the experimental emission characteristics and guides further redshifting strategies.
Abstract
The deterministic realization of quantum light sources operating at telecom wavelengths is essential for long-distance fiber-based quantum communication and distributed quantum computing. In this work, we demonstrate that telecom O-band emission can be achieved from site-controlled InGaAs/GaAs quantum dots (QDs). Our concept utilizes a buried AlAs/AlO stressor layer with the unique feature that induces a well-defined and controllable tensile strain field at the growth surface, enabling both a redshift of QD emission to the 1.3~\mu m range and site-selective nucleation at the mesa centers. This concept eliminates not only the need for strain-reducing layers (SRLs), which are known to degrade optical coherence, but also provides spatial control and spectral tunability. The grown telecom QDs show pure single-photon emission with …
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Taxonomy
TopicsSemiconductor Quantum Structures and Devices · Strong Light-Matter Interactions · Photonic Crystals and Applications
