Reliable and High Performance IGZO and In2O3 Transistors via Channel Capping

TL;DR

This paper presents a novel channel capping technique for IGZO and In2O3 transistors that enhances reliability and performance, enabling compatibility with high-temperature BEOL processes without degradation.

Contribution

It introduces a new amorphous In2O3 with SiO2 capping layer that improves threshold stability and mobility in oxide transistors under high-temperature conditions.

Findings

High extrinsic saturation mobility of 33.1 cm2/V.s

Only 5mV Vt shift after bias stress

Compatibility with 400°C BEOL thermal budget

Abstract

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide material properties. An indium oxide transistor with a novel amorphous In2O3 mixed with SiO2 capping layer exhibits a positive threshold voltage, high extrinsic saturation mobility 33.1 cm2/V.s ,and only a 5mV Vt shift after positive-bias stress at 3 MV/cm for 1000s at room temperature, superior to conventional SiO2 encapsulation.