Charge Transport Modeling of CdSe/ZnS core/shell Quantum Nanorod Light-Emitting Diodes

TL;DR

This paper models charge transport and optical properties of CdSe/ZnS core-shell nanorod-based QD-LEDs using a self-consistent numerical approach, revealing voltage-dependent electron dynamics and tunable emission features.

Contribution

It introduces a rigorous numerical method to analyze charge transport and optical behavior in core-shell nanorod QD-LEDs, highlighting voltage-controlled emission tuning.

Findings

Voltage influences electron localization and tunneling in nanorods.

External bias modulates emission energy and intensity.

Charge density and potential distributions are characterized accurately.

Abstract

In this study, we investigate the electronic structure, charge transport dynamics, and optical properties of a quantum dot light-emitting diode (QD-LED) featuring a double nanorod (NR) emission layer composed of CdSe-ZnS core-shell structures. Utilizing a rigorous self-consistent numerical approach, we solve the coupled Schrodinger-Poisson equations iteratively to obtain accurate wave functions, energy levels, and potential profiles under varying external bias voltages. Detailed analyses reveal voltage-dependent electron localization dynamics, demonstrating a systematic transition of electrons between distinct NR regions via quantum tunneling. Charge density and electrostatic potential distributions are modeled comprehensively, employing the asymmetric Erlang distribution to characterize interface effects. By calculating current-voltage (I-V) characteristics and photoluminescence spectra, we demonstrate that external voltage serves as a robust tuning parameter for modulating emission energies and intensities, underscoring the potential of these NR-LED systems for tunable optoelectronic and photonic applications.