Hydrogenation-induced gigantic resistance decrease of palladium films deposited by high pressure magnetron sputtering

TL;DR

This paper reports a significant decrease in electrical resistance of disordered palladium films upon hydrogenation, achieved through high-pressure sputtering, improving hydrogen sensor performance and understanding hydrogenation effects.

Contribution

It introduces a novel high-pressure sputtering method to produce Pd films with exceptional resistance change ratios and elucidates mechanisms behind hydrogenation-induced crystallization and contact improvement.

Findings

Resistance change ratio up to 1/335

Hydrogenation induces Pd crystallization

Enhanced electrical contacts among Pd grains

Abstract

We demonstrate a pronounced decrease in the electrical resistance of highly disordered palladium (Pd) films deposited under a high working Ar pressure using a compact film coating system. The resulting resistance change ratio of up to $1/335$ is predominant among those reported previously. Film characterization suggests two primary mechanisms responsible for this significant resistance reduction: atomic force microscopy observation indicates improved electrical contacts among Pd grains, and X-ray diffraction measurement demonstrates hydrogenation-induced crystallization of Pd. These findings offer a simple scheme to enhance hydrogen sensor performance and can contribute to a more comprehensive understanding of the hydrogenation process in Pd.