Crystallographic Orientation-Dependent Magnetotransport in the Layered Antiferromagnet -- CrSBr

TL;DR

This study comprehensively investigates how magnetoresistance in CrSBr varies with crystallographic orientation, revealing its potential for sensitive magnetic field detection due to anisotropic electronic transport properties.

Contribution

It provides the first systematic analysis of magnetotransport in CrSBr across all crystallographic axes, highlighting its anisotropic and ferromagnetic behaviors.

Findings

Magnetoresistance varies significantly with current and magnetic field orientation.

Hysteresis observed in in-plane magnetic fields indicates ferromagnetic behavior.

Electronic transport is highly sensitive to crystallographic directions.

Abstract

Among two-dimensional magnetic materials, CrSBr has attracted considerable attention owing to its coexistence of ferromagnetic and antiferromagnetic ordering, which depends sensitively on crystallographic orientation. An additional distinguishing feature of CrSBr is its highly anisotropic Fermi surface in momentum space. In this work, we present a comprehensive investigation of magnetoresistance by systematically orienting the bias current and the applied magnetic field along all three crystallographic axes. We demonstrate that the magnetoresistance serves as a direct probe of electronic anisotropy, exhibiting pronounced variations when the current is applied along different crystallographic directions under a magnetic field perpendicular to the sample plane. For in-plane magnetic fields, we observe conventional anisotropic magnetoresistance accompanied by hysteresis, indicative of ferromagnetic behavior. Overall, our study provides a complete picture of electronic transport in CrSBr as a function of bias current and magnetic field orientation with respect to crystallographic directions, thereby opening pathways for future experiments requiring high sensitivity of electrical resistance to magnetic field gradients.