Antiferromagnetic Pure Spin Current Memdevices

TL;DR

This paper introduces a theoretical concept for a pure spin-current memory device using antiferromagnetic materials, highlighting a novel effect and mechanisms for generating and controlling spin currents without charge transport.

Contribution

It proposes the spintronic-magneto-impedictive effect as a new theoretical basis for antiferromagnetic spin-current devices, expanding understanding of spin current control in these materials.

Findings

Identification of the spintronic-magneto-impedictive effect.

Analysis of spin current generation via the spin-Rice-Mele Hamiltonian.

Insights into controlling spin currents with magnetic field gradients.

Abstract

Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily being accompanied by net charge transport. This opens new possibilities for low-power information processing and novel device architectures. In this work, we propose a novel effect, the spintronic-magneto-impedictive effect, as the theoretical basis for a pure spin-current memory-like device based on antiferromagnetic components. We focus on materials that can be modeled by the so-called spin-Rice-Mele Hamiltonian, incorporating a magnetic field gradient that explicitly breaks inversion symmetry. Our results shed light on how spin currents are generated and controlled, providing new insights into the potential of these materials for next-generation spintronic technologies.