Chern Insulator in magnetic-doped two-dimensional semiconductors

TL;DR

This paper proposes a method to induce topologically non-trivial bands with non-zero Chern numbers in doped transition metal dichalcogenides, enabling potential realization of the quantum anomalous Hall effect.

Contribution

It introduces a novel approach using magnetic doping and spin-orbit coupling to achieve Chern insulators in 2D semiconductors, confirmed by calculations on V-doped WSe2 and WS2.

Findings

Doped states induce band inversion near the valence band edge.

Magnetic order coexists with nontrivial topological properties.

Potential platform for quantum anomalous Hall effect exploration.

Abstract

We propose an approach to induce nontrivial bands with non-zero Chern numbers by utilizing strong spin-orbit coupling in transition metal dichalcogenides with dopants. We demonstrate that a doped state near the valence-band edge induces band inversion with the hybridized host band, leading to topologically non-trivial properties. Calculations for V-doped WSe2 and WS2 confirm this mechanism. The coexistence of magnetic order and nontrivial topology in these systems offers a promising platform for exploring the quantum anomalous Hall effect.