Quantum transfer in high-root topological insulators

TL;DR

This paper investigates quantum state transfer in high-root topological insulators, revealing multiple transfer pathways, relations between transfer times, and enhanced fidelity due to topological protection, which could advance quantum communication technologies.

Contribution

It introduces the concept of quantum transfer in high-root topological insulators with multiple edge states, extending transfer time relations and demonstrating improved fidelity through topological protection.

Findings

Multiple transfer processes due to various edge states.

Transfer times relate across different models and gaps.

Higher fidelity achieved with increased domain wall states.

Abstract

This paper focuses on the quantum state transfer in a one-dimensional (1D) high-root topological insulator (HRTI) with an arbitrary number of domains. We present the possibility of having multiple transfer processes in the same model due to the existence of various edge states in distinct energy gaps, which may benefit recent (de)multiplexing technologies. We also derived the relations between transfer times of different root models and different gaps in the same model. We show how the exponential decay in transfer time caused by the fragmentation of a parent chain into domains can be generalized to its higher-root versions while maintaining a high transfer fidelity, and how the increasing number of domain wall states leads to a higher transfer fidelity against a general disorder regime due to the topological protection inherited from the parent model.