Long photoexcited carrier lifetime in a stable and earth-abundant zinc polyphosphide
Zhenkun Yuan, Genevieve Amobi, Shaham Quadir, Smitakshi Goswami, Guillermo L. Esparza, Gideon Kassa, Gayatri Viswanathan, Joseph T. Race, Muhammad R. Hasan, Jack R. Palmer, Sita Dugu, Yagmur Coban, Andriy Zakutayev, Obadiah G. Reid, David P. Fenning, Kirill Kovnir

TL;DR
This study discovers that monoclinic ZnP2 exhibits exceptionally long photoexcited carrier lifetimes and high stability, bridging the gap between inorganic semiconductors and halide perovskites for optoelectronic applications.
Contribution
The paper reports the identification and experimental validation of ZnP2 as a long carrier lifetime, defect-resistant inorganic semiconductor with unique polyphosphide bonding.
Findings
Carrier lifetime of up to 1 microsecond in ZnP2
Bright band-to-band photoluminescence at 1.49 eV
ZnP2's polyphosphide bonding suppresses deep defects
Abstract
Halide perovskites have revolutionized optoelectronics by demonstrating that long carrier lifetime can be achieved in materials processed in relatively uncontrolled environments, whereas conventional inorganic semiconductors typically suffer from short carrier lifetime unless very carefully prepared and postprocessed. Here, we report the discovery of exceptionally long photoexcited carrier lifetime in monoclinic ZnP2, effectively bridging the carrier lifetime gap between direct-gap inorganic semiconductors and halide perovskites. Through computational screening, ZnP2 is identified as a long carrier lifetime semiconductor characterized by an unconventional polyphosphide bonding, combining covalently bonded phosphorus chains and polar-covalent Zn-P tetrahedra. Experimentally, ZnP2 crystals synthesized from low-purity precursors exhibit bright band-to-band photoluminescence at 1.49 eV and…
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