Dielectric response and structural properties of finite-temperature electron liquids
Chengliang Lin, Yong Hou, Jianmin Yuan, Yong Wu, Jianguo Wang

TL;DR
This paper develops an analytical model for the static structure factor of finite-temperature electron liquids, enabling accurate and efficient predictions of their dielectric response and related properties across various conditions.
Contribution
It introduces a new model combining physical insights and simulation constraints to accurately describe the static structure factor of electron liquids at finite temperatures.
Findings
Model accurately reproduces static structure factor features.
Good agreement with simulation data for friction coefficient.
Facilitates improved simulations of warm dense matter.
Abstract
The dielectric response and structural properties of finite-temperature electron liquids are central to accurately describing the physical behavior of electronic systems. This study presents a robust analytical model for the static structure factor of the uniform electron gas, combining physically motivated form for the static structure factor with constraints derived from high-accuracy path integral Monte Carlo simulations. The model accurately reproduces key features of the static structure factor across a broad range of temperatures and densities. Using this static structure factor, the density response function is directly evaluated, enabling a self-consistent definition of the static local field correction. As practical applications, the model is employed to investigate the low-velocity stopping power and the electron-ion friction coefficient. Results derived for the friction…
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsDust and Plasma Wave Phenomena · Plasma Diagnostics and Applications · Semiconductor materials and devices
