Engineering van der Waals heterostructures for dispersion-selective meV-scale quantum sensing

TL;DR

This paper proposes a novel quantum sensing technique using van der Waals heterostructures of Dirac materials to selectively detect particles based on their dispersion relations, enhancing sensitivity at the meV scale.

Contribution

It introduces a new method for dispersion-selective quantum sensing utilizing interfacial orbital hybridization in layered Dirac materials, demonstrated through first-principles calculations.

Findings

Orbital hybridization can be tuned via strain and layer number.

Heterostructures of ZrTe5 and HfTe5 show potential for dispersion filtering.

Feasibility of using Dirac materials for next-generation quantum sensors.

Abstract

Quantum sensing of meV-scale scattering and absorption of impinging particles with electrons in solid state detectors is a challenging technological advancement with the potential to enable breakthroughs in quantum information applications and studies of fundamental physics. However, a key obstacle for current sensing schemes is the difficulty in distinguishing the signals from particles of interest and from intrinsic excitations, like phonons or magnons. Here we propose a technique to selectively detect impinging particles based not only on their imparted energy, but specifically by their dispersion relations. By harnessing interfacial orbital hybridization in van der Waals heterostructures of Dirac materials, interlayer charge transfer may be promoted only for pre-selected impinging particles of interest. Using first-principles density functional theory (DFT) calculations of heterostructures of the layered Dirac materials ZrTe5 and HfTe5, we examine the effects of strain and layer number for successfully tuning orbital hybridization in their electronic structure. We demonstrate a proof-or-principle feasibility study for using Dirac materials to construct dispersion filters to be leveraged for next-generation meV-scale quantum sensors.