Quantum electrometry in a silicon carbide power device

TL;DR

This paper demonstrates that silicon vacancy centers in silicon carbide can be used as quantum sensors to map high electric fields with high spatial resolution in power devices, aiding reliability and failure detection.

Contribution

The study introduces the use of Vsi centers in SiC as quantum sensors capable of detecting arbitrary electric fields in high-bias power devices, a novel application for device diagnostics.

Findings

Detected electric fields of ~2.3 MV/cm, close to SiC breakdown field.

Vsi centers respond to electric fields in multiple directions, enabling comprehensive mapping.

High-resolution electric field mapping supports device reliability and failure analysis.

Abstract

For high-bias operation devices such as silicon carbide (SiC) power devices, early detection of failure mechanisms is essential to ensure reliability. This requires a method to map high electric fields with high spatial resolution, which has not been realized until now. Here we report that the silicon vacancy (Vsi) in SiC has outstanding characteristics for detecting electric fields applied in various directions within a high-biased SiC device. Vsi exhibits an equivalent response to electric field components parallel (Epara) and perpendicular (Eperp) to the c-axis, a feature unique among quantum sensors, and the responsiveness to Epara and Eperp enables detection of arbitrary electric fields encountered in cutting-edge SiC power devices. We confirmed high electric field detection of ~2.3 MV/cm, which is ~90% of the breakdown electric field of a 4H-SiC with typical carrier concentration. Selectively formed Vsi enables high-resolution mapping of electric field distribution. Vsi-based quantum sensors bring data-driven research and development methodologies as well as device degradation diagnosis.