Can We Trust LLMs on Memristors? Diving into Reasoning Ability under Non-Ideality
Taiqiang Wu, Yuxin Cheng, Chenchen Ding, Runming Yang, Xincheng Feng, Wenyong Zhou, Zhengwu Liu, Ngai Wong

TL;DR
This paper investigates how memristor non-idealities affect LLM reasoning and evaluates strategies like thinking mode and in-context learning to enhance robustness in memristor-based CIM architectures.
Contribution
It provides a comprehensive analysis of memristor non-idealities on LLM reasoning and systematically evaluates training-free strategies to improve robustness.
Findings
Reasoning capability decreases significantly with memristor non-idealities.
Shallow layer redundancy improves robustness effectively.
Thinking mode is better at low noise levels but degrades at high noise.
Abstract
Memristor-based analog compute-in-memory (CIM) architectures provide a promising substrate for the efficient deployment of Large Language Models (LLMs), owing to superior energy efficiency and computational density. However, these architectures suffer from precision issues caused by intrinsic non-idealities of memristors. In this paper, we first conduct a comprehensive investigation into the impact of such typical non-idealities on LLM reasoning. Empirical results indicate that reasoning capability decreases significantly but varies for distinct benchmarks. Subsequently, we systematically appraise three training-free strategies, including thinking mode, in-context learning, and module redundancy. We thus summarize valuable guidelines, i.e., shallow layer redundancy is particularly effective for improving robustness, thinking mode performs better under low noise levels but degrades at…
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Taxonomy
TopicsAdvanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials
