Can electronic quantum criticality drive phonon-induced linear-in-temperature resistivity?
Haoyu Guo, Debanjan Chowdhury

TL;DR
This paper investigates whether electronic quantum criticality can induce low-temperature linear-in-temperature resistivity via phonon softening, analyzing theoretical conditions and applying a specific model to the Ising-nematic case.
Contribution
It derives a criterion for phonon softening to control low-temperature transport and analyzes a nonlinear coupling mechanism near a quantum critical point, highlighting limitations for phonon-driven linear resistivity.
Findings
Phonon softening near criticality can influence low-temperature resistivity.
The dynamics are near the marginal boundary for T-linear scattering in clean systems.
Feedback effects tend to weaken the robustness of T-linear resistivity at low temperatures.
Abstract
Optical phonons naturally generate linear-in- resistivity in the high-temperature equipartition regime, but their finite gap prevents this mechanism from surviving to asymptotically low temperatures. Here we analyze whether proximity to an electronic quantum critical point can remove this obstruction by strongly softening an optical phonon. We first derive a model-independent criterion for such softened phonons to control low-temperature transport: besides reducing the renormalized optical gap, the Landau-damped phonon must acquire a dynamical exponent , where is the spatial dimension of the phonon, so that a sufficiently large thermally occupied phase space survives as . We then analyze a concrete mechanism in which the phonon couples nonlinearly to long-wavelength electronic collective modes near a quantum critical point, and apply it to the…
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Taxonomy
TopicsQuantum and electron transport phenomena · Topological Materials and Phenomena · Thermal properties of materials
