Symmetry Breaking and Transition to Robust Excitonic Topological Order in InAs/GaSb Bilayers

TL;DR

This paper investigates how Coulomb interactions induce symmetry breaking and lead to a novel excitonic topological order in InAs/GaSb bilayers, revealing new quantum phase transitions influenced by gating and magnetic fields.

Contribution

It demonstrates the emergence of excitonic topological order driven by Coulomb interactions and symmetry breaking in electron-hole bilayers, a novel insight into topological phase transitions.

Findings

Coulomb interactions induce symmetry breaking in InAs/GaSb bilayers.

Gating enhances interlayer Coulomb interactions, leading to excitonic topological order.

Magnetic fields cause a transition from quantum spin Hall insulator to excitonic topological order.

Abstract

Symmetry and topology are fundamental concepts deeply intertwined in various fields of physics, especially in the studies of quantum phases of matter. The critical role that Coulomb interactions play in symmetry breaking during topological transitions is a fundamental problem that has not been fully understood. Utilizing gated indium arsenide-gallium antimonide bilayers, we demonstrate that Coulomb interactions play a critical role in symmetry breaking and topological transitions. Whereas the quantum spin Hall insulator (QSHI) dominates the high-density regime, gating the system into the dilute regime enhances interlayer Coulomb interactions and leads to an emergent excitonic topological order (ETO) with spontaneous time-reversal-symmetry breaking. Moreover, applying a magnetic field drives a transition from the QSHI to the ETO accompanied by Coulomb-induced spin-rotation-symmetry breaking, which selects triplet electron-hole pairing in the lowest Landau levels. These results underscore an intricate interplay between symmetry and topology under Coulomb interactions in electron-hole bilayers.