Anisotropic implantation damage build-up and crystal recovery in $\beta$-Ga$_2$O$_3$

TL;DR

This study investigates how defect accumulation and recovery in anisotropic $eta$-Ga$_2$O$_3$ vary with crystal orientation during ion implantation and annealing, revealing orientation-dependent defect dynamics and strain relaxation effects.

Contribution

It provides a systematic analysis of defect build-up and recovery in $eta$-Ga$_2$O$_3$ across different orientations, highlighting the influence of anisotropy on defect dynamics and crystal healing.

Findings

Defect accumulation rates vary with surface orientation and channelling directions.

Annealing at 500°C effectively relaxes strain and removes point defects.

Higher temperature annealing improves crystal quality but more slowly.

Abstract

The present work aims at investigating the defect accumulation and recovery dynamics in the inherently anisotropic $\beta$-Ga$_2$O$_3$ lattice. A systematic Rutherford Backscattering Spectrometry in Channelling mode (RBS/C) analysis of Cr-implanted samples was performed across multiple surface orientations and channelling directions. Distinct apparent defect accumulation and annealing rates were observed along different channelling axes, mainly attributed to the shadowing of certain types of defects along some directions. The efficient defect removal observed after annealing was correlated with the strain relaxation observed via High-Resolution X-ray diffraction (HRXRD) at temperatures as low as 500 {\deg}C, which is attributed to the removal of point defects. Annealing at higher temperature further improves crystalline quality but at a slower rate. In short, this work enhances the understanding of the effect of structural anisotropic properties of $\beta$-Ga$_2$O$_3$ during ion implantation, as well as the crystal recovery during thermal annealing, highlighting the interplay between crystallography and defect dynamics.