Mid-Infrared Modulation of Quantum Emitters in Hexagonal Boron Nitride

TL;DR

This paper demonstrates a reversible, non-destructive method to enhance single photon emission in hexagonal boron nitride using mid-infrared excitation, modulating defect dynamics via phonon-assisted processes at room temperature.

Contribution

It introduces a novel MIR co-excitation technique to control quantum emitters in hBN, enabling room-temperature modulation of their emission properties.

Findings

MIR resonant excitation enhances SPE emission in hBN.

The process is reversible and non-destructive.

Phonon-assisted recombination modulates carrier dynamics.

Abstract

Single photon emitters (SPEs) are promising building blocks for practical devices in quantum technologies. Traditionally, these systems are excited using off-resonant visible light through their phonon transitions, yet this process remains poorly understood. Here, we explore the interaction of mid-infrared (MIR) excitation on the properties of SPEs in hexagonal boron nitride. Notably, we present a reversible, non-destructive method to enhance emission from blue SPEs using MIR co-excitation. By resonantly driving defect-localized in-plane infrared-active optical phonon modes near 7.3 um, the MIR field modulates carrier dynamics through a phonon-assisted recombination. This unique feature, not observed previously for defects in solids, is a promising reservoir in a growing toolkit to modulate quantum emitters at room temperature for their use in practical quantum technologies.