Designing Extremely Low-Power Topological Transistors with 1T'-MoS2 and HZO for Cryogenic Applications

TL;DR

This paper proposes a novel cryogenic topological transistor design using 1T'-MoS2 and HZO to achieve ultra-low power dissipation, crucial for large-scale quantum computing control systems.

Contribution

It introduces a theoretical design of negative-capacitance topological insulator FETs combining 1T'-MoS2 and HZO for cryogenic applications, demonstrating steep transfer curves and high transconductance.

Findings

Exhibits steep-slope transfer characteristics at cryogenic temperatures

Achieves ultra-high transconductance at low drain voltage

Potential to significantly reduce power dissipation in quantum computing interfaces

Abstract

Large-scale quantum computing requires cryogenic electronic controllers such as control/readout circuit and routing circuit. However, current technologies face high power dissipation problems, hindering large-scale qubit integration. Here, we theoretically propose extremely low-power cryogenic topological transistors, i.e., negative-capacitance topological insulator field-effect transistors (NC-TIFETs). By combining a gate-field-induced two-dimensional 1T'-Molybdenum Disulfide (MoS$_2$) topological channel with a hafnium-zirconium oxide (HZO) ferroelectric gate insulator, NC-TIFETs exhibit an extremely steep-slope transfer curve and ultra-high transconductance at low drain voltage ($V_{\mathrm{D}}$). Therefore, NC-TIFETs are the compelling candidate for minimizing power dissipation in the cryogenic electronic interfaces essential for large-scale quantum computing systems.