Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)

TL;DR

This study examines how layer structure and strain affect the morphology and electronic properties of InAs quantum wells on InP, revealing their influence on mobility, surface morphology, and quantum confinement effects.

Contribution

It provides new insights into the relationship between layer design, strain, and electronic properties of InAs quantum wells on InP (001).

Findings

Layer design influences mobility anisotropy.

Surface morphology correlates with electronic properties.

Quantum confinement affects band nonparabolicity.

Abstract

High-quality InAs quantum wells grown on InP are a promising platform for topological quantum information processing due to their large g-factor, strong Rashba spin-orbit interaction, and their compatibility with in-situ-deposited superconductors. In this work, we investigate InAs/InGaAs quantum wells grown on InP (001) wafers, focusing on how the layer structure and strain influence the electronic properties and surface morphology. By combining quantum transport measurements with atomic force microscopy, we show that the layer design predominantly affects the mobility anisotropy, which aligns well with the surface morphology. Surface characterization further reveals the mechanism of quantum well collapse when the layer thickness exceeds the strain limit. In addition, transport measurements demonstrate that quantum confinement has a clear impact on band nonparabolicity.