Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces
Viviana Dovale-Farelo, Kamal Choudhary

TL;DR
This study systematically evaluates computational methods for predicting Schottky barrier heights at Si/metal interfaces, emphasizing the importance of structural and electrostatic consistency, and proposes improved hybrid approaches for accurate, cost-effective predictions.
Contribution
It introduces a physically grounded assessment of exchange-correlation treatments and reference protocols, demonstrating improved accuracy in SBH predictions through mixed hybrid-semilocal methods with strained references.
Findings
Mixed hybrid-semilocal approaches improve SBH accuracy.
Structural and electrostatic consistency are crucial for reliable predictions.
Methodology achieves near-experimental accuracy with balanced computational cost.
Abstract
Accurate prediction of Schottky barrier heights (SBHs) at metal-semiconductor (M-SC) interfaces is essential for understanding and optimizing charge injection in electronic and optoelectronic devices. However, first-principles calculations of SBHs remain challenging due to the combined difficulties of semiconductor bandgap underestimation, metal Fermi level placement, lattice-mismatch, relative geometric alignment and electrostatic potential alignment across heterogeneous interfaces. In this work, we present a systematic and physically grounded assessment of computational strategies for SBH prediction using Si(111)/Metal (Al, Cu, Ag, Au) interfaces as representative test cases. We evaluate multiple exchange-correlation (XC) treatments, in combination with three distinct bulk reference protocols: relaxed bulk, relaxed bulk with spin-orbit coupling, and strained bulk references consistent…
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Taxonomy
TopicsSemiconductor materials and interfaces · Silicon and Solar Cell Technologies · Semiconductor materials and devices
