Altermagnets Enable Gate-Switchable Helical and Chiral Topological Transport with Spin-Valley-Momentum-Locked Dual Protection

TL;DR

This paper introduces a symmetry-based framework in altermagnets to realize and switch between helical and chiral topological phases, enabling electrically controllable topological transport with robust protection mechanisms.

Contribution

It demonstrates a unified approach to achieve and electrically switch between helical and chiral topological phases in altermagnets, supported by first-principles calculations.

Findings

Identification of SVML edge states with quantized spin conductance

Demonstration of electrical switching between topological phases

Proposal of realistic material platforms for topological devices

Abstract

We establish a unified, symmetry-driven framework that combines the alternating spin splitting of altermagnets with valley topology to realize and electrically interconvert helical and chiral topological phases within a single material platform. We first demonstrate a magnetic analogue of the quantum spin Hall effect in altermagnets, hosting helical spin-valley-momentum-locked (SVML) edge states characterized by a composite spin-valley Chern number Csv = 2. Large-scale quantum transport simulations show these SVML edge states exhibit fully quantized spin conductance robust against nonmagnetic and long-range magnetic disorder, reflecting their dual topological protection, while remaining vulnerable to short-range magnetic disorder. Exploiting that the counterpropagating SVML modes are linked by crystal rotation symmetry, we introduce a gate-tunable sublattice-staggered potential that selectively gaps one valley and converts the helical state into a chiral quantum anomalous Hall phase with Csv = 1, robust against all disorder types. Reversing the potential switches the transmitted spin-valley polarization. Our first-principles calculations identify monolayer V2STeO and VO families as realistic platforms supporting both helical and chiral topological phases and their electrical switching. These results establish altermagnets as electrically programmable platforms for robust topological devices across charge, spin, and valley.