Tight-Binding Device Modeling of 2-D Topological Insulator Field-Effect Transistors With Gate-Induced Phase Transition

TL;DR

This paper develops a tight-binding and NEGF-based model for 2-D topological insulator FETs, analyzing their performance and phase transition effects for advanced low-dissipation electronics.

Contribution

It introduces a novel device simulation approach for TIFETs based on tight-binding and NEGF, highlighting phase transition effects on device operation.

Findings

Channel length significantly affects device performance.

Topological phase transition enables nontraditional switching.

Model provides direct performance estimation for TIFETs.

Abstract

Topological insulator field-effect transistors (TIFETs) built on 2-D quantum spin Hall insulators are being considered as advanced logic transistors due to their potentially superior performance originating from the dissipationless edge transport. This paper presents a device modeling based on the tight-binding model and the nonequilibrium Green's function formalism to simulate the current-voltage characteristics of the TIFETs. We then use the device simulator to demonstrate the effect of channel length on device performance. The device modeling will not only enable a direct estimation of TIFET performance but also shed light on the nontraditional switching operation via the topological phase transition.