Interfering trajectories in a ballistic Andreev cavity
Pankaj Mandal, Marcel Kaschper, Fernando Dominguez, Soumi Mondal, Lukas Lunczer, Dongyun Chen, Martin P. Stehno, Ewelina M. Hankiewicz, Bj\"orn Trauzettel, Teun M. Klapwijk, Charles Gould, Laurens W. Molenkamp

TL;DR
This paper investigates how device geometry influences Andreev reflection in ballistic semiconductor-superconductor hybrids, revealing two distinct conductance peaks linked to different ballistic trajectories and their magnetic field responses.
Contribution
It introduces the first study of ballistic Andreev transport in a cavity with detailed geometric considerations, highlighting the importance of trajectories and magnetic effects.
Findings
Two finite bias conductance peaks within the superconductor gap.
Different magnetic field responses of the two conductance peaks.
Identification of trajectory classes dominating Andreev transport.
Abstract
The conventional description of transport through the interface between a normal conductor and a superconductor reduces the system to a one-dimensional problem treating Andreev reflection based on a zero-dimensional Sharvin type point-contact model, and effectively neglects all considerations of device geometry. While this has been successful in systems where conductance in the normal material is in the diffusive transport regime, such an over-simplification of the problem fails in other transport regimes. In particular, when transport is ballistic as in a typical semiconductor-superconductor hybrid structure, geometrical effects are inherently important, and a proper description must consider a one-dimension contact injecting into a two-dimensional ballistic cavity. We present the first study of this regime and explore the bias-voltage dependence of Andreev transport in a cavity-type…
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Taxonomy
TopicsTopological Materials and Phenomena · Quantum and electron transport phenomena · 2D Materials and Applications
