Anomalous Klein tunnelling with magnetic barriers in strained graphene

TL;DR

This paper investigates how mechanical strain and magnetic barriers influence electron transport in graphene, revealing an anomalous Klein tunnelling effect that enables tunable conductance for advanced device applications.

Contribution

It introduces a modified transfer-matrix method to analyze the combined effects of strain and magnetic barriers on electron tunnelling in graphene, demonstrating a novel control mechanism.

Findings

Strain and magnetic barriers induce anomalous Klein tunnelling in graphene.

Conductance can be effectively modulated by adjusting strain and barrier configurations.

Mechanical and electromagnetic controls enable tunable electronic properties in 2D materials.

Abstract

We study electron transport in a strained graphene sheet subjected to a sequence of $N$ electrostatic and magnetic barriers. Employing a modified and improved transfer-matrix framework, we examine how the transmission and reflection coefficients evolve with variations in uniaxial strain and in the number of barriers. The interplay of mechanical deformation and external magnetic fields is found to generate an anomalous Klein tunnelling, allowing the conductance to be effectively modulated through strain and barrier configurations. These findings highlight the role of strain engineering and magnetic field modulation as powerful tools for tailoring charge transport in two-dimensional materials. More broadly, they underscore how mechanical and electromagnetic control can be used to design next-generation solid-state devices with tunable electronic properties.