Electrical driving of hole spin states in planar silicon MOS device by g-matrix modulation

TL;DR

This paper investigates electrical control of hole spin states in planar silicon MOS quantum dots, revealing how g-matrix modulation influences spin control mechanisms and noise sensitivity for improved qubit performance.

Contribution

It systematically analyzes spin control mechanisms using g-matrix formalism, identifying optimal magnetic field orientations for minimal charge noise impact in silicon hole qubits.

Findings

Largest Rabi frequency in in-plane magnetic field orientation

Smallest Rabi frequency near out-of-plane orientation

Identification of low-noise regions for spin control

Abstract

Hole spins in group IV quantum dots are a highly promising way to develop CMOS compatible spin qubits owing to their inherent spin-orbit coupling, which enables fast, coherent, and electrical spin control. However, spin-orbit coupling not only enables multiple spin-control mechanisms, but also exposes the qubits to charge noise. In this work, we perform a systematic study of the spin control mechanism in a planar silicon hole quantum dot. We use g-matrix formalism to discern contributions from the various spin driving mechanisms and identify regions where spins are less sensitive to charge noise. By mapping out the dependence of the Rabi frequency on the magnetic field orientation, we observe the largest Rabi frequency in the in-plane direction and the smallest Rabi frequency close to the out-of-plane direction. These results enhance the understanding of how different mechanisms contribute to spin driving within an industrially relevant architecture and aid in establishing the operating conditions for the rapid and coherent manipulation of hole qubits.