Electrically-controllable superconducting memory effect in UTe2
Zheyu Wu, Hanyi Chen, Mengmeng Long, Daniel Shaffer, Dmitry V. Chichinadze, Andrej Cabala, Theodore I. Weinberger, Alexander J. Hickey, Jinxu Pu, Dave Graf, Vladimir Sechovsky, Michal Valiska, Gang Li, Rui Zhou, F. Malte Grosche, Alexander G. Eaton

TL;DR
This paper demonstrates intrinsic superconducting memory in UTe2, where magnetic pulses induce metastable states with different critical currents, highlighting potential for ultralow-power superconducting memory devices.
Contribution
It reveals a novel, intrinsic superconducting memory effect in UTe2 driven by vortex competition, enabling controllable switching without interfaces.
Findings
Magnetic field and current pulses switch UTe2 between metastable states with different critical currents.
Memory states are stable over extended periods, controlled by pulse parameters.
The effect is rooted in vortex dynamics intrinsic to the superconducting order of UTe2.
Abstract
If a computer could be assembled from superconducting components, the energy efficiency would far surpass that of conventional electronics. Historic research efforts towards this goal yielded pivotal breakthroughs in the development and discovery of scanning tunnelling microscopy and high temperature superconductivity. Although recent strides have been taken in advancing superconducting diode and switching technologies, harnessing read/writeable memory functionality in superconducting platforms has remained challenging. Here we show that bulk single crystal specimens of the triplet superconductor candidate uranium ditelluride (UTe) possess such properties. Upon applying a magnetic field to access an intermediate regime straddling two distinct superconducting phases, we find that direct current pulses can push the material in and out of a metastable state possessing an enhanced…
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