Graphene-capped bismuthene on SiC as a platform for correlated quantum spin Hall edge states

TL;DR

This paper demonstrates that graphene-capped bismuthene on SiC can host robust, correlated quantum spin Hall edge states, combining environmental protection with preserved topological properties, and revealing enhanced electronic correlations.

Contribution

It introduces a method to create well-defined bismuthene islands with controlled edges on SiC, and shows that graphene capping preserves topological edge states while inducing electronic correlations.

Findings

Edge states reside inside the bulk band gap and are charge neutral

Graphene capping preserves topological character and provides environmental protection

Enhanced electronic correlations observed in edge channels

Abstract

Epitaxial bismuthene on SiC(0001) hosts symmetry-protected metallic edge states within a large bulk band gap, establishing it as a promising two-dimensional topological insulator for hightemperature quantum spin Hall (QSH) transport. Here we realize bismuthene islands by intercalating Bi beneath zero-layer graphene on SiC(0001) followed by hydrogen treatment, yielding well-defined edges with controlled terminations. Spectroscopic measurements demonstrate that the edge states reside inside the bulk band gap and remain charge neutral. The graphene overlayer interacts only weakly with the bismuthene, preserving its topological character while providing environmental protection. Notably, the one-dimensional edge channels exhibit signatures of enhanced electronic correlations relative to freestanding bismuthene, suggesting proximity-induced modification of the QSH edge physics. These results establish graphene-capped bismuthene as a robust and tunable platform for correlated quantum spin Hall states.