Absolute scintillator light yield correction for SiPIN readout via Transfer Matrix Method and Geant4 optical simulation
Ge Ma (2), Zhiyang Yuan (1), Chencheng Feng (1), Zirui Yang (2), Zhenwei Yang (1), Ming Zeng (2) ((1) School of Physics, State Key Laboratory of Nuclear Physics, Technology, Peking University, Beijing 100871, China, (2) Department of Engineering Physics, Tsinghua University

TL;DR
This paper introduces a combined transfer matrix and Geant4 optical simulation method to accurately correct for systematic biases in measuring scintillator light yield, accounting for complex geometries and interface optics.
Contribution
The paper presents a novel correction framework integrating microscopic optical interface modeling with macroscopic photon transport for precise scintillator light yield measurement.
Findings
Achieved consistent intrinsic light yield measurements across different optical configurations.
Demonstrated the method on GAGG:Ce crystal with a measured LY of approximately 56,300 photons/MeV.
Effectively decoupled geometry and interface effects from photon detection efficiency.
Abstract
Precise measurement of the absolute light yield (LY) of scintillators has long been limited by systematic effects inherent in realistic readout geometries. Large-angle incidence, multiple reflections inside the optical housing, and refractive-index mismatch at the coupling interface all introduce biases that cannot be removed by a simple conversion based on the detector's nominal quantum efficiency. To address this problem, we present a correction method that combines the Transfer Matrix Method (TMM) with Geant4 optical Monte Carlo simulation. A wave-optics model of the SiPIN surface thin-film stack is used to extract the angle- and wavelength-dependent single-hit detection probability , which is then dynamically coupled into the macroscopic photon transport simulation, achieving a full-chain integration of the microscopic interface optical response…
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Taxonomy
TopicsRadiation Detection and Scintillator Technologies · Advanced Semiconductor Detectors and Materials · Photocathodes and Microchannel Plates
