Molecular Beam Epitaxy Growth of Wafer-scale SnSe van der Waals Ultrathin Layers

TL;DR

This paper demonstrates a controlled molecular beam epitaxy process to produce wafer-scale, high-quality ultrathin SnSe layers with excellent crystallinity and surface quality, enabling advanced device applications.

Contribution

It provides a detailed growth parameter framework for wafer-scale SnSe ultrathin layers via MBE, including a three-step growth method for high-quality films.

Findings

Optimized growth window identified for high-quality SnSe films

Achieved wafer-scale coalesced ultrathin SnSe layers

Produced films with RMS roughness as low as 0.6 nm

Abstract

Tin selenide (SnSe) is a van der Waals (vdW) layered post-transition metal monochalcogenide compound which is promising for a wide range of device applications when its thickness is reduced to a few layers. Hence, developing a mature synthesis technique to obtain wafer-scale, high-quality ultrathin SnSe layers is crucial. In this work, we present a comprehensive study on the effect of growth parameters on the material quality of ultrathin SnSe thin films grown by molecular beam epitaxy. A growth window including substrate temperature of 210-270{\deg}C and low Se/Sn flux ratio with Se valve position of 10-30 mils has been identified which results in SnSe films with root-mean-square (RMS) roughness as low as 0.6 nm and full-width-at-half-maximum (FWHM) of 0.1{\deg} in SnSe (400) x-ray diffraction (XRD) rocking curve. Finally, using a three-step growth approach, we demonstrate wafer-scale coalesced ultrathin SnSe layers with thicknesses from 20 nm down to 5 nm, with good crystallinity, structural quality, and surface morphology. This work establishes a growth condition framework for MBE-grown SnSe and presents a viable route for developing wafer-scale single-layer films, unlocking the potential of this highly promising material for advanced device integration.