Charge collection parameterization of MALTA2, a depleted monolithic active pixel sensor

TL;DR

This paper introduces a fast, data-driven simulation method for a depleted monolithic active pixel sensor, enabling efficient modeling of charge collection without detailed proprietary process data.

Contribution

The authors develop a novel, computationally lightweight charge collection parameterization method validated on MALTA2 sensors, improving simulation efficiency for sensor design optimization.

Findings

Model accurately reproduces measured inpixel efficiency

Enables realistic yet fast analog pixel simulation

Facilitates optimization of digital sensor design for high-rate applications

Abstract

A fast simulation method is presented for a depleted monolithic active pixel sensor, which uses a data driven parameterization of the charge collection and propagation. This approach provides an efficient alternative to TCAD simulations, particularly for sensors whose proprietary process details - such as doping profiles or implant geometries - are unavailable. Data was obtained with a MALTA2 sensor fabricated in a 180 nm CMOS imaging technology on 30 {\mu}m epitaxial silicon using the MALTA beam telescope at CERN SPS. The model reproduces the measured inpixel efficiency with high accuracy and enables a realistic yet computationally lightweight analog pixel simulation. This method will be further employed in optimizing the digital sensor design for applications in high-rate particle tracking and high-granularity calorimetry.