Titanic overconfidence -- dark uncertainty can sink hybrid metrology for semiconductor manufacturing
Ronald G. Dixson, Adam L. Pintar, R. Joseph. Kline, Thomas A. Germer, J. Alexander Liddle, John S. Villarrubia, and Samuel M. Stavis

TL;DR
This paper highlights how dark uncertainty can cause significant underestimation of total measurement uncertainty in hybrid metrology for semiconductor manufacturing, risking overconfidence and potential failure.
Contribution
It demonstrates that standard uncertainty models often ignore dark uncertainty, proposing a random effects model to better account for it in linewidth measurements.
Findings
Random effects model estimates total uncertainty at +/- 0.8 nm
Common mean model underestimates uncertainty by up to five times
Dark uncertainty significantly impacts hybrid measurement accuracy
Abstract
Hybrid metrology for semiconductor manufacturing is on a collision course with dark uncertainty. An IEEE technology roadmap for this venture has targeted a linewidth uncertainty of +/- 0.17 nm at 95 % coverage and advised the hybridization of results from different measurement methods to hit this target. Related studies have applied statistical models that require consistent results to compel a lower uncertainty, whereas inconsistent results are prevalent. We illuminate this lurking issue, studying how standard methods of uncertainty evaluation fail to account for the causes and effects of dark uncertainty. We revisit a comparison of imaging and scattering methods to measure linewidths of approximately 13 nm, applying contrasting statistical models to highlight the potential effect of dark uncertainty on hybrid metrology. A random effects model allows the combination of inconsistent…
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Taxonomy
TopicsIndustrial Vision Systems and Defect Detection · Advanced Measurement and Metrology Techniques · Scientific Measurement and Uncertainty Evaluation
