Atomic-Scale Quantum Control of Single Spin Defects in a Two-Dimensional Semiconductor

TL;DR

This paper demonstrates atomic-scale control and manipulation of individual spin defects in a monolayer semiconductor, enabling quantum control and coupling for potential quantum technology applications.

Contribution

It introduces a method to create, manipulate, and couple single spin defects in a 2D semiconductor using atomic-scale techniques, advancing quantum control in 2D materials.

Findings

Successful creation and manipulation of individual spin defects.

Observation of coherent spin control at the single-defect level.

Engineered spin-spin interactions between defect pairs.

Abstract

Individual spin defects in solids are promising building blocks for quantum technologies, but their deterministic creation, individual addressability, and operation near surfaces remain major challenges. Two-dimensional materials provide an attractive alternative, as their single-layer thickness enables direct atomic-scale access to defect states. Here, we demonstrate single-spin control of solid-state defects in a two-dimensional semiconductor by a combination of scanning tunneling microscopy and electron spin resonance. We create and manipulate individual sulfur vacancies and carbon substitution defects in monolayer molybdenum disulfide and characterize their spin dynamics, including coherent control, at the single-defect level. Using atomic manipulation, we further engineer and probe spin-spin interactions between defect pairs. Our results demonstrate deterministic creation, addressability, coherent manipulation, and controlled coupling of individual spin defects within a single experimental platform. This establishes atomically engineered spin defects in two-dimensional semiconductors as a versatile class of controllable solid-state quantum systems and opens a route towards tailored quantum sensing experiments.