Concerted Carrier-Barrier Dynamics in van der Waals Schottky Junctions Revealed by Time-Resolved Atomic Force Microscopy
Munenori Yokota, Hiroyuki Mogi, Yutaka Mera, Katsuya Iwaya, Taketoshi Minato, Shoji Yoshida, Osamu Takeuchi, Tatsuo Nakagawa, Hidemi Shigekawa

TL;DR
This study employs time-resolved atomic force microscopy to directly observe and analyze the ultrafast carrier and barrier dynamics at van der Waals Schottky junctions, revealing key processes that influence device performance.
Contribution
It introduces a novel real-space measurement technique to visualize nanoscale carrier-barrier interactions in TMDC-based junctions, advancing understanding of ultrafast interfacial dynamics.
Findings
Nanoscale Schottky barrier modulation occurs on nanosecond timescales.
Carrier dynamics are driven by the interplay of photoexcited carriers and barrier response.
The method reveals processes critical for optimizing optoelectronic device performance.
Abstract
Schottky junctions based on transition-metal dichalcogenides (TMDCs) have emerged as key building blocks for next-generation optoelectronic devices that demand ultrafast response and high sensitivity. However, the ultrafast, nanoscale carrier dynamics at these interfaces, crucial for device performance, have remained experimentally elusive. Here, we introduce optical pump-probe time-resolved atomic force microscopy to directly visualize, in real space, the nanosecond-scale modulation of the Schottky barrier potential at a van der Waals junction formed by point contact between WSe2 and a PtIr tip. Complementary analyses using transient absorption spectroscopy and light-modulated current-voltage characteristics together with model simulations reveal that time-resolved currents originate from the concerted temporal evolution of photoexcited carriers and the subsequent barrier response,…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Force Microscopy Techniques and Applications
