Heterogeneous Memory Design Exploration for AI Accelerators with a Gain Cell Memory Compiler
Xinxin Wang, Lixian Yan, Shuhan Liu, Luke Upton, Zhuoqi Cai, Yiming Tan, Shengman Li, Koustav Jana, Peijing Li, Jesse Cirimelli-Low, Thierry Tambe, Matthew Guthaus, H.-S. Philip Wong

TL;DR
This paper introduces an OpenGCRAM compiler that supports heterogeneous on-chip memory systems combining SRAM and Gain Cell RAM, optimizing AI accelerator memory configurations for performance and energy efficiency.
Contribution
It presents a novel compiler tool for designing and characterizing heterogeneous memory systems with GCRAM and SRAM for AI accelerators.
Findings
Supports both SRAM and GCRAM in a unified compiler
Characterizes area, delay, and power for various configurations
Enables systematic optimization of memory systems for AI tasks
Abstract
As memory increasingly dominates system cost and energy, heterogeneous on-chip memory systems that combine technologies with complementary characteristics are becoming essential. Gain Cell RAM (GCRAM) offers higher density, lower power, and tunable retention, expanding the design space beyond conventional SRAM. To this end, we create an OpenGCRAM compiler supporting both SRAM and GCRAM. It generates macro-level designs and layouts for commercial CMOS processes and characterizes area, delay, and power across user-defined configurations. The tool enables systematic identification of optimal heterogeneous memory configurations for AI tasks under specified performance metrics.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsParallel Computing and Optimization Techniques · Low-power high-performance VLSI design · Ferroelectric and Negative Capacitance Devices
