Near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality for scalable quantum circuits

TL;DR

This paper reports the growth of near-single-domain superconducting aluminum films on GaAs(111)A with exceptional crystalline quality, enabling scalable quantum circuits with high coherence.

Contribution

It demonstrates the reproducible fabrication of ultra-high-quality Al films on GaAs substrates with unprecedented twin-domain ratios and crystalline perfection.

Findings

Lowest twin-domain ratios reported for Al on any substrate

Unmatched narrow FWHM in azimuthal scans indicating high crystalline quality

Critical temperatures approaching bulk aluminum values

Abstract

We have reproducibly grown near-single-domain superconducting aluminum (Al) films on GaAs(111)A wafers using molecular beam epitaxy. Synchrotron X-ray diffraction revealed twin-domain ratios of 0.00005 and 0.0003 for 19.4-nm- and 9.6-nm-thick films, respectively-the lowest reported for Al on any substrate and long considered unattainable for practical device platforms. Azimuthal scans across off-normal Al{$11\bar{1}$} reflections exhibit narrow full width at half maximum (FWHM) values down to $0.55^\circ$, unmatched by epi-Al grown by any other method. Normal scans showed a well-defined (111) orientation with pronounced Pendell\"osung fringes, and $\theta$-rocking-curve FWHM values down to $0.018^\circ$; the former indicates abrupt film-substrate and oxide-film interfaces. Electron backscatter diffraction mapping confirms macroscopic in-plane uniformity and the absence of $\Sigma$3 twin domains. Atomic force microscopy and scanning transmission electron microscopy confirmed atomically smooth surfaces and abrupt heterointerfaces. The films exhibit critical temperatures approaching bulk values, establishing a materials platform for scalable, high-coherence superconducting qubits.