Phonon-enhanced strain sensitivity of quantum dots in two-dimensional semiconductors
Sumitra Shit, Yunus Waheed, Jithin Thoppil Surendran, Indrajeet Dhananjay Prasad, Kenji Watanabe, Takashi Taniguchi, Santosh Kumar

TL;DR
This study demonstrates that quantum dots in two-dimensional semiconductors exhibit significantly enhanced strain sensitivity due to phonon interactions, offering a new approach for spectral tuning in quantum photonic applications.
Contribution
It reveals the phonon-mediated enhancement of strain sensitivity in quantum dots within 2D semiconductors, advancing strain engineering for quantum photonics.
Findings
Quantum dots show fourfold increased strain sensitivity in WS₂.
Quantum dots show twofold increased strain sensitivity in WSe₂.
Enhanced strain sensitivity is linked to phonon interactions and quantum confinement.
Abstract
Two-dimensional semiconductors have attracted considerable interest for integration into emerging quantum photonic networks. Strain engineering of monolayer transition-metal dichalcogenides (ML-TMDs) enables the tuning of light-matter interactions and associated optoelectronic properties, and generates new functionalities, including the formation of quantum dots (QDs). Here, we combine spatially resolved micro-photoluminescence (-PL) spectroscopy from cryogenic (494 K) to room temperature with micro-Raman spectroscopy at room temperature to investigate the strain-dependent emission energies of thousands of individual QDs in ML-WS and ML-WSe, integrated across multiple heterostructures and a piezoelectric device. Compared with delocalized excitons, QDs in both materials exhibit enhanced strain sensitivities of their emission energies approximately fourfold in…
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Taxonomy
Topics2D Materials and Applications · Graphene research and applications · Strong Light-Matter Interactions
