Origin of a shallow electron pocket: $\beta$-band in Co$_{1/3}$TaS$_2$ studied by angle-resolved photoemission spectroscopy
Wojciech Sas, Yuki Utsumi Boucher, Seyed Ashkan Moghadam Ziabari, Gaurav Pransu, Trpimir Iv\v{s}i\'c, Ivana Vobornik, Jun Fujii, Naveen Singh Dhami, Bruno Gudac, Mario Novak, L\'aszl\'o Forr\'o, Neven Bari\v{s}i\'c, Ivo Batisti\'c, Petar Pop\v{c}evi\'c

TL;DR
This study reveals that a shallow electron pocket in Co$_{1/3}$TaS$_2$ originates from strong electron correlations on Co sites, which are essential for understanding its electronic structure beyond standard DFT methods.
Contribution
The paper demonstrates that the $eta$-feature in Co$_{1/3}$TaS$_2$ is correlation-driven and not surface-related, using advanced theoretical modeling beyond standard DFT+U.
Findings
The $eta$ pocket is reproduced by cluster perturbation theory (CPT).
Reduced Co content diminishes the $eta$ feature.
Strong correlations and long-range order are necessary for the $eta$ feature.
Abstract
We investigate the electronic structure and Fermi surface of CoTaS using angle-resolved photoemission spectroscopy (ARPES) combined with theoretical modeling beyond standard density functional theory (DFT+U). A shallow electron pocket, the so-called feature, is observed at the Fermi level near the corner of the superlattice Brillouin zone, representing the first experimental observation of this feature in an intercalated TaS compound. Similar pockets have been reported in NbS ( = Co, Cr, Ni), where their surface versus bulk origin remains actively debated. Because conventional DFT+U does not capture this feature, we employ cluster perturbation theory (CPT) to incorporate an explicit treatment of strong electron correlations () on the Co sites. CPT successfully reproduces the feature, demonstrating its origin from correlation-driven bulk…
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Taxonomy
Topics2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Machine Learning in Materials Science
