Intrinsic low-spin state and strain-tunable anomalous Hall scaling in high-quality SrRuO3 (111) films
Harunori Shiratani, Yuki K. Wakabayashi, Yoshiharu Krockenberger, Masaki Kobayashi, Kohei Yamagami, Takahito Takeda, Shinobu Ohya, Masaaki Tanaka, and Yoshitaka Taniyasu

TL;DR
This study investigates high-quality SrRuO3 (111) films, revealing an intrinsic low-spin state and strain-dependent anomalous Hall effect scaling, advancing understanding of Berry-curvature-driven transport in this material.
Contribution
It provides the first comprehensive analysis of the structure, magnetism, and transport properties of high-quality SrRuO3 (111) films, highlighting strain-tunable anomalous Hall scaling and intrinsic low-spin Ru states.
Findings
Achieved highest residual resistivity ratio for SrRuO3 (111) films.
Confirmed intrinsic low-spin Ru ground state via X-ray magnetic circular dichroism.
Demonstrated strain-dependent separation of intrinsic and extrinsic anomalous Hall contributions.
Abstract
The (111)-oriented 4d ferromagnetic perovskite SrRuO3 (SRO) offers a unique triangular-lattice geometry, making it a promising platform for exploring Berry-curvature-driven and spin-orbit-coupled transport. Here, we present a systematic study of the structure, magnetism, and magnetotransport of high-quality SRO (111) thin films with thicknesses t = 1.2-60 nm grown on SrTiO3 (111) substrates by machine-learning-assisted molecular beam epitaxy. We achieved a residual resistivity ratio of 45.5 in a 60 nm-thick film, the highest reported for this orientation, enabling access to intrinsic electronic and magnetic behavior. Temperature-dependent resistivity confirms Fermi-liquid transport below 15 K in both coherently strained (t = 10, 20 nm) and strain-relaxed (t = 60 nm) films, thereby enabling detailed magnetotransport and magnetic measurements. The linear, non-saturating positive…
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Taxonomy
TopicsAdvanced Condensed Matter Physics · Electronic and Structural Properties of Oxides · Topological Materials and Phenomena
