Review of prototypes developed in a 65 nm CMOS imaging technology in view of vertexing applications at a future lepton collider

TL;DR

This paper reviews the development and characterization of monolithic active pixel sensor prototypes in 65 nm CMOS technology for vertexing at future lepton colliders, highlighting design challenges and future directions.

Contribution

It provides a comprehensive review of existing prototypes, their performance, and simulation efforts, informing future design choices for collider vertex detectors.

Findings

Prototypes demonstrate feasibility for collider vertexing applications.

Identifies key challenges and areas for further research.

Provides a foundation for future sensor design in 65 nm CMOS technology.

Abstract

The OCTOPUS project addresses the development and characterization of monolithic active pixel sensors in the TPSCo 65 nm ISC technology in view of vertexing applications at a future lepton collider. Meeting the corresponding requirements -- outlined in the ECFA detector road map -- will necessitate the simulation, design, and testing of prototypes and a demonstrator chip in this very process. This work reviews the literature on existing prototypes, summarizing their design characteristics, properties, and performance in charged-particle detection, and provides an overview of previous simulation efforts. The presented results suggest the feasibility of the endeavor while showcasing challenges, the need for further investigations, and providing a foundation for imminent design choices.