Short period InGaAs/AlInAs THz quantum cascade laser in thin double metal cavities operating up to 188K
Sebastian Gloor, David Stark, Martin Franki\'e, Urban Senica, Mattias Beck, Giacomo Scalari, and J\'er\^ome Faist

TL;DR
This paper reports a terahertz quantum cascade laser using InGaAs/AlInAs with a double metal cavity, achieving operation up to 188K due to material and design improvements.
Contribution
The study introduces a high-temperature THz quantum cascade laser with a novel two-well design and thin active region, enabling operation at record temperatures for this type of device.
Findings
Operates up to 188K in copper-based double metal waveguides
Achieves maximum current density of 1.4kA/cm$^2$
Operates at 170K with 10% duty cycle due to low Joule heating
Abstract
We present a two-well terahertz (THz) quantum cascade laser designed for high temperature operation based on the InGaAs/AlInAs material system. The lighter effective mass and higher energy barriers increase the gain at high temperatures (T > 150K). When processed in copper-based double metal waveguides the devices show laser action up to a maximum operating temperature of 188K with a maximum current density of 1.4kA/cm. The low Joule heating due to reduced active region thickness and low electrical bias allows operation at 10% duty cycle up to a temperature of 170K.
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Taxonomy
TopicsSpectroscopy and Laser Applications · Semiconductor Lasers and Optical Devices · Semiconductor Quantum Structures and Devices
